1. Product Science and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms set up in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing exceptional atomic bond stamina.
The Si– C bond, with a bond power of around 318 kJ/mol, is amongst the toughest in structural ceramics, providing superior thermal stability, solidity, and resistance to chemical attack.
This durable covalent network causes a product with a melting point surpassing 2700 Ā° C(sublimes), making it among one of the most refractory non-oxide ceramics readily available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical strength and creep resistance at temperature levels over 1400 Ā° C, where numerous metals and standard porcelains start to soften or weaken.
Its low coefficient of thermal development (~ 4.0 Ć 10 ā»ā¶/ K) integrated with high thermal conductivity (80– 120 W/(m Ā· K)) enables quick thermal biking without catastrophic cracking, a critical feature for crucible performance.
These inherent homes originate from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise an extremely steady and densely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive duty in toughness and thermal shock resistance.
Sintered SiC crucibles are produced via solid-state or liquid-phase sintering at temperatures over 2000 Ā° C, typically with boron or carbon ingredients to improve densification and grain boundary communication.
This procedure produces a fully dense, fine-grained structure with minimal porosity (
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